Aerospace Performance Parts is pleased to offer immediate purchasing options for Northrop Grumman Systems Corporation part number GM820AUF1RN, which you have taken interest in. This Microcircuit Memory item is listed alongside the NSN 5962-01-081-9132 for ease of identification, with various additional information provided on this page for your reference. Should you wish to obtain solutions on this particular listing, we invite you to complete the Request for Quote (RFQ) form on this page at your earliest convenience. Responses are always offered shortly after we receive and review each request, with solutions we give being fully based on the details we are provided.
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If you happen to require expedited shipping for part number GM820AUF1RN or any other FSC 5962 Microcircuits Electronic components we carry from Northrop Grumman Systems Corporation under CAGE Code 26512, be sure to let us know as soon as possible. We would be happy to discuss the options that we can potentially provide, our track record of on-time delivery being a testament to our dedication to customer satisfaction. You can either include such details within your request, or get in touch with staff directly. Otherwise, request a quote on NSN 5962-01-081-9132 part number GM820AUF1RN today, knowing we will support all your operational needs with care.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-081-9132 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 010819132 | N | D | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| D | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 438251-01 | 1 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFJQ | STORAGE TEMP RANGE | -65.0/125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND POSITIVE OUTPUTS AND HERMETICALLY SEALED AND W/ENABLE AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
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