Aerospace Performance Parts is pleased to offer immediate purchasing options for Raytheon Company part number 462793-1, which you have taken interest in. This Microcircuitmemory item is listed alongside the NSN 5962-00-166-6256 for ease of identification, with various additional information provided on this page for your reference. Should you wish to obtain solutions on this particular listing, we invite you to complete the Request for Quote (RFQ) form on this page at your earliest convenience. Responses are always offered shortly after we receive and review each request, with solutions we give being fully based on the details we are provided.
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If you happen to require expedited shipping for part number 462793-1 or any other FSC 5962 Microcircuits Electronic components we carry from Raytheon Company under CAGE Code 04934, be sure to let us know as soon as possible. We would be happy to discuss the options that we can potentially provide, our track record of on-time delivery being a testament to our dedication to customer satisfaction. You can either include such details within your request, or get in touch with staff directly. Otherwise, request a quote on NSN 5962-00-166-6256 part number 462793-1 today, knowing we will support all your operational needs with care.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-00-166-6256 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 001666256 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
DMS 82108B | 1 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | 0.0/70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/160.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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