Aerospace Performance Parts is pleased to offer immediate purchasing options for Samsung Semiconductor Inc part number K6T1008C2EDB7000, which you have taken interest in. This Microcircuit Memory item is listed alongside the NSN 5962-01-408-2869 for ease of identification, with various additional information provided on this page for your reference. Should you wish to obtain solutions on this particular listing, we invite you to complete the Request for Quote (RFQ) form on this page at your earliest convenience. Responses are always offered shortly after we receive and review each request, with solutions we give being fully based on the details we are provided.
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If you happen to require expedited shipping for part number K6T1008C2EDB7000 or any other FSC 5962 Microcircuits Electronic components we carry from Samsung Semiconductor Inc under CAGE Code 0DUN9, be sure to let us know as soon as possible. We would be happy to discuss the options that we can potentially provide, our track record of on-time delivery being a testament to our dedication to customer satisfaction. You can either include such details within your request, or get in touch with staff directly. Otherwise, request a quote on NSN 5962-01-408-2869 part number K6T1008C2EDB7000 today, knowing we will support all your operational needs with care.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014082869 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| UPD431000ACZ-70L | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
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