Aerospace Performance Parts is pleased to offer immediate purchasing options for Siemens Corporation part number BB409E7762, which you have taken interest in. This Semiconductor Device Set item is listed alongside the NSN 5961-01-357-4779 for ease of identification, with various additional information provided on this page for your reference. Should you wish to obtain solutions on this particular listing, we invite you to complete the Request for Quote (RFQ) form on this page at your earliest convenience. Responses are always offered shortly after we receive and review each request, with solutions we give being fully based on the details we are provided.
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If you happen to require expedited shipping for part number BB409E7762 or any other FSC 5961 Semiconductor Devices and Associated Hardware components we carry from Siemens Corporation under CAGE Code 25088, be sure to let us know as soon as possible. We would be happy to discuss the options that we can potentially provide, our track record of on-time delivery being a testament to our dedication to customer satisfaction. You can either include such details within your request, or get in touch with staff directly. Otherwise, request a quote on NSN 5961-01-357-4779 part number BB409E7762 today, knowing we will support all your operational needs with care.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-357-4779 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 013574779 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| BB409E7762 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ASKA | COMPONENT NAME AND QUANTITY | 82 SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
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